The P55NF06 MOSFET is an N-channel power MOSFET that can be used in many different applications. Note: Complete technical details can be found in the P55NF06 datasheet given at the bottom of the page Rise time and fall time is 50nS and 15nS.Gate threshold voltage (VGS-th) is 20V (max).Drain Source Resistance (RDS) is 0.018 Ohms.However, a driver circuit is needed if the MOSFET has to be switched in completely.Ĭurrent flows out through Source at leaves MOSFET Hence it is commonly used to drive applications. It also has a VGS of 20V at which the MOSFET will start conducting. ![]() The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ.
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